Sofia University Faculty of Physics Department Of Condensed Matter Physics and Microelectronics V.Donchev’s homepage

List of scientific publications

of Vesselin Todorov DONCHEV

2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 Before 2000

2023

· Vesselin Donchev, Malina Milanova
Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells
Coatings 13 (12), 2052 (2023) https://doi.org/10.3390/coatings13122052

· Vesselin Donchev, Davide Regaldo, Stefan Georgiev, Aleksandra Bojar, Mattia da Lisca, Kiril Kirilov, José Alvarez, Philip Schulz, and Jean-Paul Kleider
Surface Photovoltage Study of Metal Halide Perovskites Deposited Directly on Crystalline Silicon
ACS Omega 8 (9) 8125–8133 (2023)https://doi.org/10.1021/acsomega.2c07664

· M. Milanova, S. Georgiev, V. Donchev
Doping of dilute nitride compounds grown by liquid phase epitaxy
J. Phys.: Conf. Series. 2436, 012032 (2023), doi:10.1088/1742-6596/2436/1/012032
(poster at the 22^th International School on Condensed Matter Physics – 22^nd ISCMP-2022, 29.08 – 02.09.2022, Varna, Bulgaria )

2022 up

· Aleksandra BOJAR, Davide Regaldo, José Alvarez, David Alamarguy, Vesselin Donchev, Stefan Georgiev, Philip Schulz and Jean-Paul Kleider
Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration
EPJ Photovoltaics 13, 18 (2022) https://doi.org/10.1051/epjpv/2022016

· Vesselin Donchev, Malina Milanova, Stefan Georgiev
Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications
Energies 15 (18) 6563 (2022) https://www.mdpi.com/1996-1073/15/18/6563

· M. Milanova, V. Donchev, S. Georgiev, K. Kirilov, P. Terziyska
Effect of growth temperature on nitrogen incorporation into GaAsN during liquid-phase epitaxy
J. Phys.: Conf. Series 2240, 012047 (2022)
(poster at 22th International Summer School on Vacuum, Electron and Ion Technologies, 20 – 24.09.2019, online)

2021 up

· V. Donchev, M.Milanova.
Dilute nitrides heterostructures grown by liquid phase epitaxy for solar cells applications
J. Phys.: Conf. Series 1762, 012025 (2021)
(invited lecture at the 21^th International School on Condensed Matter Physics - 21^th ISCMP-2020, 31.08 – 04.09.2020, Varna, Bulgaria )

· S. Georgiev, V. Donchev, M. Milanova
Calculation of the Bandgap of Dilute Nitride GaAsSbN Alloys
J. Phys.: Conf. Series 1762 012042 (2021)
(poster at the 21^th International School on Condensed Matter Physics - 21^th ISCMP-2020, 31.08 – 04.09.2020, Varna, Bulgaria )

· V. Donchev, M. Milanova, K. Kirilov, S. Georgiev, K.L. Kostov, G.M. Piana, G. Avdeev
Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications
Journal of Crystal Growth, 574, 126335, (2021) ISSN 0022-0248

· V. Donchev, M. Milanova, S. Georgiev, book chapter “Study of GaAs-Based Dilute Nitride Materials Grown by Liquid Phase Epitaxy” in the book Newest Updates in Physical Science Research (B. P. International, 2021) Vol. 7, 31–38. https://doi.org/10.9734/bpi/nupsr/v7/2234F

2020 up

· M. Milanova, V. Donchev, K. J. Cheetham, Zh. Cao, I. Sandall, G. M. Piana, O. S. Hutter, K. Durose, A. Mumtaz
Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy
Solar energy 208, 659-664 (2020) ISSN: 0038-092X

· M. Milanova, V. Donchev, B. Arnaudov, D. Alonso-Álvarez, P. Terziyska
GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy
J. Mat. Sci.:Materials in Electronics 31, 2073–2080 (2020)
DOI 10.1007/s10854-019-02728-5

· V. Donchev, M. Milanova, S. Georgiev, K. L. Kostov and K. Kirilov
Dilute nitride InGaAsN and GaAsSbN layers grown by liquid-phase epitaxy for photovoltaic applications
J. Phys.: Conf. Series 1492, 012049 (2020)
(poster at 21th International Summer School on Vacuum, Electron and Ion Technologies, 23 − 27 September 2019, Sozopol, Bulgaria)

· A. Mumtaz, M. Milanova, I. Sandall, K. Cheetham, Z. Cao, M. Bilton, G. Piana, N. Fleck, L. Phillips, O. Hutter, V. Donchev, K. Durose
GaAsSbN for Multi-Junction Solar Cells
Conference Record of the IEEE Photovoltaic Specialists Conference, June 2020, art. no. 9300524, pp. 1799-1803

2019 up

· V. Donchev
Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications
Mater. Res. Express 6 103001 (2019), DOI: https://doi.org/10.1088/2053-1591/ab3bf0

· M. Milanova, V. Donchev, K. L. Kostov, D. Alonso-Álvarez, P. Terziyska, G. Avdeev, E. Valcheva, K. Kirilov and S. Georgiev
Study of GaAsSb:N bulk layers grown by liquid phase epitaxy for solar cells applications
Mat. Res.Express 6 (7) 075521 (2019)

· V. Donchev, S. Georgiev, A. Aho, M. Guina
Surface photovoltage study of GaInAsN layers for photovoltaic applications
J. Phys.: Conf. Series 1186 (1), 012003 (2019)
(oral presentation at the 20^th Jubilee International School on Condensed Matter Physics, 03-07.09.2018 Varna, Bulgaria)

· M. Milanova V. Donchev, P. Terziyska, E. Valcheva, S. Georgiev, K. Kirilov, I. Asenova, N. Shtinkov, Y. Karmakov, I. G. Ivanov
Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications
AIP Conference Proceedings 2075, 140004 (2019); https://doi.org/10.1063/1.5091319
(oral presentation at the 10^th Jubilee International Conference of the Balkan Physical Union 29-30.08.2018, Sofia, Bulgaria)

2018

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· Tareq Abu Hamed, ……,V. Donchev,…... et al.
Multiscale in modelling and validation for solar photovoltaics
EPJ Photovoltaics 9, 10 (2018)

· V. Donchev, S. Georgiev, I. Leontis and A. G. Nassiopoulou
Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching
ACS Appl. Energy Mater. 1 (8) 3693–3701 (2018)

· V. Donchev , M. Milanova, I. Asenova, N. Shtinkov, D. Alonso-Álvarez, A. Mellor, Y. Karmakov, S. Georgiev and N. Ekins-Daukes
Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy
J. Cryst. Growth 483 140–146 (2018)

· N. S. Beattie, P. See, G. Zoppi, P. M. Ushasree, M. Duchamp, I. Farrer, V. Donchev, D. A. Ritchie, and S. Tomic
Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering
proc. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Waikoloa Village, Hawaii, 10-15 June 2018, Article number 8547630, pp. 2747-2751.; doi: 10.1109/PVSC.2018.8547630

· К. Кирилов, Е. Вълчева, В. Дончев, К. Лозанова
ИЗСЛЕДВАНЕ НА InGaN/GaN НАНОСТРУКТУРИ ЗА LED ОСВЕТИТЕЛИ
(INVESTIGATION OF InGaN/GaN NANOSTRUCTURES FOR LEDs)
VII Международна конференция BalkanLight 2018, 04 – 06 Юни 2018, София, България

· Tsanimir Angelov , Vesselin Donchev, Stefan Georgiev and Kiril Kirilov
Carrier Lifetime and Phase Retardation of the Photoresponse of Photovoltaic Materials
J. Physics and Technology, 2 (1) 3-7 (2018)
(poster at Шеста национална студентска научна конференция по физика и инженерни технологии, 16-18.11.2017г. Пловдив, България)

· S. Georgiev, V. Donchev, M. Milanova
Surface Photovoltage Spectroscopy Characterization of GaAsSbN Layers Grown by Liquid-Phase Epitaxy
Khimiya. 27, 658-665 (2018)

2017

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· M. Milanova, V. Donchev, K. Kostov, D. Alonso-Бlvarez, E .Valcheva, K. Kirilov, I. Asenova, I. G. Ivanov, S. Georgiev and N. Ekins-Daukes
Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys
Semicond. Sci, Technol 32 (8) 085005 (2017)

· V. Donchev, I. Asenova, M. Milanova, D. Alonso-Álvarez, K. Kirilov, N. Shtinkov, I. G. Ivanov, S. Georgiev, E. Valcheva and N. Ekins-Daukes
„Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy“
J. Phys.: Conf. Ser. 794, 012013 (2017)
(poster at the 19th International School on Condensed Matter Physics - 19th ISCMP-2016, 29.08 – 02.09.2016, Varna, Bulgaria )

2016

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· V. Donchev, M. Milanova, J. Lemieux, N. Shtinkov and I. G. Ivanov
” Surface photovoltage and photoluminescence study of thick Ga(In)AsN layers grown by liquid-phase epitaxy”
J. Phys.: Conf. Ser. 700 (1) 012028 (2016)
(poster at 19th International Summer School on Vacuum, Electron and Ion Technologies, 21 − 25 September 2015, Sozopol, Bulgaria)

2015 up

· V. Donchev, Ts. Ivanov, Ts. Ivanova, S. Mathews, J. O. Kim2 and S. Krishna
“Surface photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer structures for infrared photodetectors”
Superlattices and Microstructures 88, 711–722 (2015)

2012 up

· V. Donchev, D. Nesheva, D. Todorova, K. Germanova, E. Valcheva
“Characterization of Si–SiOx nanocomposite layers by comparative analysis of computer simulated and experimental infra-red transmission spectra“
Thin Solid Films 520 (6) 2085–2091 (2012)

· T. Angelova, N. Shtinkov, Ts. Ivanov, V. Donchev, A. Cantarero, Ch. Deneke, O. G. Schmidt, and A. Cros
"Optical and acoustic phonon modes in strained InGaAs/GaAs rolled up tubes"
Appl. Phys. Lett. 100 201904 (2012).

· Ts. Ivanov, V. Donchev, K. Germanova, Ts. Tellaleva, K. Borissov, V. Hongpinyo, P. Vines, J. P. R. David, and B. S. Ooi
“Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors”
J.Physics:Conf. Ser. 356, 012032 (2012)
(poster at 17th Int. Summer School on Vacuum, Electron,and Ion Technologies – VEIT, Sept.2011, Bulgaria)

2011

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· F. Iikawa, V. Donchev, Ts. Ivanov, G. O. Dias, L. H. G. Tizei, R. Lang, E. Heredia, P. F. Gomes, M. J. S. P. Brasil, M. A. Cotta, D. Ugarte, J. P. Martinez Pastor, M. M. de Lima Jr., and A. Cantarero
“Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts“ Nanotechnology 22, 065703 (2011).

· Ts. Ivanov, V. Donchev, K. Germanova, P. F. Gomes, F. Iikawa, M. J. S. P. Brasil and M. A. Cotta
“Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopy“
J. Appl. Phys. 110 , 064302 (2011)

· T. Angelova , A. Cros , Ts. Ivanov , V. Donchev , A. Cantarero , N. Shtinkov , Ch. Deneke , and O. G. Schmidt
”Raman Scattering and Surface Photovoltage Spectroscopy Studies of InGaAs/GaAs Radial Superlattices”
AIP Conf. Proc., 1399, pp. 419-420 (2011).
(poster at the 30th International Conference on the Physics of Semiconductors (ICPS-30), Seoul (Korea), July 25-30, 2010.)

2010 up

· V. Donchev, Ts. Ivanov, K. Germanova, K. Kirilov
“Surface photovoltage spectroscopy – an advanced method for characterization of semiconductor nanostructures” (Review)
Trends in Applied spectroscopy 8, 27- 66 (2010)

· V. Donchev, Ts Ivanov, T Angelova, A Cros, A Cantarero, N Shtinkov, K Borisov, D Fuster, Y González and L González
”Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires”
J. Phys. : Conf. Ser. 210 012041 (2010)
(poster presented at 11th Int. Conf. on Optics of Excitons in Confined Systems, Madrid 7-11.09. 2009).

· Ts Ivanov, V. Donchev, T Angelova, A Cros, A Cantarero, N Shtinkov, K Borissov, D Fuster, Y González and L González
”Characterisation of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies”
J. Phys. : Conf. Ser. 253 012043 (2010)
(poster at 16the ISCMP, 2010, Varna Biulgaria)

2009 up

· Ts. Ivanov, V. Donchev,K. Germanova and K. Kirilov
“A vector model for analyzing the surface photovoltage amplitude and phase spectra applied to complicated nanostructures”
J.Phys.D: App.Phys. 42, 135302 (2009)

· D. Todorova , V. Donchev, D. Nesheva, E. Valcheva^”Computer simulation of infra-red transmission spectra of SiO_x films containing amorphous Si nanoparticles”
in: Nanoscience and Nanotechnology 9, eds. E. Balabanova, I. Dragieva, (BPS Ltd, Sofia, Bulgaria 2009) pp.17-20.
(poster at the 10^th Workshop on Nanoscience and Nanotechnology 27-28.11. 2008, Sofia)

· V. Donchev, M. Mikhov, M. Abrashev, A. Andreeva, M. Baleva, J. Bunzarov,.
”Laboratory practicum of electricity and magnetism” Eds. V. Donchev and M. Mikhov (Heron Press, Sofia, 2009) (in Bulgarian)

2008

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· V. Donchev, K. F. Karlsson, K. Kirilov, Ts. Ivanov, K. Germanova, M. Saraydarov
“Electronic states of V-shaped quantum wires with graded interfaces studied by means of 2D approach”
in: Nanoscience and Nanotechnology 8 eds. E. Balabanova, I. Dragieva, (Marin Drinov Academic Publishing House, Sofia, 2008), pp.28-32.
(poster at the 9^th Workshop on Nanoscience and Nanotechnology 28-30.11. 2007, Sofia)

· V. Donchev, D. Todorova, E. Valcheva, Ts. Ivanov, D. Nesheva
“Computer simulation of infra-red transmission spectra of SiO₂ films containing Si nanoparticles”
in: Nanoscience and Nanotechnology 8 eds. E. Balabanova, I. Dragieva, (Marin Drinov Academic Publishing House, Sofia, 2008),pp. 21-24.
(poster at the 9^th Workshop on Nanoscience and Nanotechnology 28-30.11. 2007, Sofia)

· M. Miteva¹, S. J. Vlaev^2,4, V. Donchev³, L. M. Gaggero-Sager⁴“Quantum confined Stark effect in Be delta-doped GaAs quantum wells”
in: Nanoscience and Nanotechnology 8 eds. E. Balabanova, I. Dragieva, (Marin Drinov Academic Publishing House, Sofia, 2008)
(poster at the 9^th Workshop on Nanoscience and Nanotechnology 28-30.11. 2007, Sofia)

· Ts Ivanov, V. Donchev, K Bachev, Y-H Ding, Y Wang, H S Djie and B S Ooi^“Bandgap engineering of InAs/InGaAlAs quantum dashes-in-well laser structures: A surface photovoltage spectroscopy study”
J. Phys. : Conf. Ser. 113, 012033 (2008)
(poster presented at VEIT-2007, September, 2007, Varna, Bulgaria)

· A. M. Miteva, S. J. Vlaev, and V. Donchev
“Stark effect in p-type delta doped quantum wells”
Progress In Electromagnetics Research Letters, 2, 45-52 (2008).
(poster at Progress In Electromagnetics Research Symposium ( PIERS 2008) Hangzhou, CHINA, 24-28.03. 2008)

2007

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· V. Donchev, K. Kirilov, Ts. Ivanov, K. Germanova
A surface photovoltage spectroscopy study of GaAs/AlAs complicated nanostructures with graded interfaces
J. Appl. Phys. 101 (10) (2007)

· Ts. Ivanov, V. Donchev, Y. Wang, H. S. Djie, and B. S. Ooi
“Interdiffused InAs/InGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy”
J. Appl. Phys. 101 (11) (2007)

· A. M. Miteva, S. J. Vlaev, V.T. Donchev, L. M. Gaggero-Sager
“Quantum confined Stark effect in n-type delta-doped quantum wells”
Revista Mexicana de Fisica S53 (7), 74-77 (2007)
(oral presentation on the Latin American Symposium of Solid State Physics, 20-24. 11.2006, Puebla, Mexico).

· K. Kirilov, V. Donchev, M. Saraydarov, K. Germanova
“Electron states energies and wave functions of V-shaped quantum wires with graded interfaces”
J. Optoel. & Adv. Mat. 9 (1) 197-200 (2007)
(poster at the 14^th ISCMP, 17-22.09. 2006, Varna, Bulgaria)

· K. Kirilov, V. Donchev, M. Saraydarov, K. Germanova
“Electronic states in V-shaped quantum wires as a function of the interface grading”
in: Nanoscience and Nanotechnology 7, eds. E. Balabanova, I. Dragieva, (Heron Press, Sofia, 2007), pp.27-30.
(poster at the 8^th Workshop on Nanoscience and Nanotechnology 22-24.11. 2006, Sofia)

· Ts. Ivanov, V. Donchev, K. Kirilov, K. Germanova
“Surface photovoltage investigation of GaAs quantum wells “
J. Optoel. & Adv. Mat. 9 (1) 190-193 (2007).
(poster at the 14^th ISCMP, 17-22.09. 2006, Varna, Bulgaria)

· S. Dimitrov, E. Valcheva, V. Donchev
“Electronic states properties in GaN/Al_xGa₁_-_xN heterostructures with graded interfaces”
J. Optoel. & Adv. Mat. 9 (1) 194-196 (2007)
(poster at the 14^th ISCMP, 17-22.09. 2006, Varna, Bulgaria)

· V. Donchev, Ts. Ivanov, Y. Wang, H. S. Djie, B. S. Ooi
“Surface photovoltage spectroscopy of interdiffused InAs/InGaAlAs quantum dashes-in-well structure”
phys. stat. sol. (c) 4 ( 2) 412– 414 (2007)
(poster at ICSNN, 30.07. - 04.08.2006, Istanbul, Turkey

2006

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· V. Donchev, K. Kirilov, Ts. Ivanov, K. Germanova
”Surface photovoltage phase spectroscopy– a handy tool for characterisation of bulk semiconductors and nanostructures”
Mat. Sci. & Engineering B: Solid State Materials for Advanced Technology 129 (1-3) 186-192 (2006)

· V. Donchev, E.S. Moskalenko, K.F. Karlsson, P.O. Holtz, B. Monemar, W.V. Schoenfeld, J.M.Garcia, P.M. Petroff
" Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes”
Physics of the Solid State 48 (10) 1993-1999 (2006), Translation from Fizika Tverdogo Tela 48 (10) 1877-1879 (2006).

· V. Donchev, K. Germanova, N. Shtinkov, S. J. Vlaev
”Electronic structure and optical properties of AlAs/GaAs superlattices containing embedded GaAs quantum wells with abrupt and graded interfaces”
"Frontal Semiconductor Research” , ed. Oliver T. Chang (Nova Science Publishers, Inc., New York, 2006)

· Ts. Ivanov, K. Kirilov, V. Dontchev, K. Germanova
"Surface Photovoltage Spectroscopy of GaAs Quantum Wells Embedded in AlAs/GaAs Superlattices"
Bulg. J. Phys. 33 (3) 217-222 (2006) - Proc. Alexander von Humboldt Conf. ”Advances in Physics and Astrophysics of the 21^st Century”, 6–11.09.2005, Varna, Bulgaria, Ed. I. Zhelyazkov, (Heron Press, Sofia, 2006).

· K. Kirilov, Ts. Ivanov, V. Donchev, K. Germanova
”An Alternative Approach For Determining The Semiconductor Type Based on SPV Phase Spectral Measurements”
Bulg. J. Phys. 33 (3) 223-228 (2006) - Proc. Alexander von Humboldt Conf. ”Advances in Physics and Astrophysics of the 21^st Century”, 6–11.09.2005, Varna, Bulgaria, Ed. I. Zhelyazkov, (Heron Press, Sofia, 2006).

2005

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· Evgenii S. Moskalenko,Fredrik K. Karlsson, Vesselin T. Donchev, Per Olof Holtz, Bo Monemar, Winston V. Schoenfeld, and Pierre M. Petroff
” Effects of Separate Carrier Generation on the Emission Properties of InAs/GaAs Quantum Dots “
Nano Lett., 5 (11), 2117-2122 (2005)

· E.S. Moskalenko, K.F. Karlsson, V. Donchev, P.O. Holtz, B. Monemar, W.V. Schoenfeld, P.M. Petroff
"Effect of the Electric Field on the Carrier Collection Efficiency of InAs/GaAs quantum dots"
Physics of the Solid State, 47 (11) 2154–2161 (2005). From Fizika Tverdogo Tela, Vol. 47, No. 11, 2005, pp. 2066–2073

· V. Donchev, K. Germanova, N. Shtinkov,
“Оptical properties and interface quality of GaAs quantum wells embedded in short-period AlAs/GaAs superlattices“
Annual of University of Sofia, Faculty of Physics. 98, 103-120 (2005)

· K. Kirilov, K. Germanova, V. Donchev and Tzv. Ivanov
”Numerical simulation of time-resolved surface photovoltage at SI-SiO₂ interfaces”
J. Optoel. & Adv. Mat. 7 (1) 529-532 (2005)
(poster at the 13th ISCMP, 30.08-03.09. 2004, Varna, Bulgaria)

· M. Saraydarov, V. Donchev, K. Germanova and K. Kirilov
”Electronic states of diffused GaAs/AlGaAs quantum wires”
J. Optoel. & Adv. Mat. 7 (1) 525-528 (2005)
(poster at the 13^th ISCMP, 30.08-03.09. 2004, Varna, Bulgaria)

· K. Kirilov, V. Donchev, Tsv. Ivanov, K. Germanova, P. Vitanov and P. Ivanov
”A surface photovoltage spectroscopy system used for minority carrier diffusion length measurements on floating zone silicon”
J. Optoel. & Adv. Mat. 7 (1) 533-536 (2005).
(poster at the 13^th ISCMP, 30.08-03.09. 2004, Varna, Bulgaria)

· V. Donchev, K.Kirilov, M. Saraydarov, K. Germanova
“Computer simulation study of the electronic structure of V-shaped quantum wires with graded interfaces”
in: Nanoscience and Nanotechnology, 5, eds. E. Balabanova, I. Dragieva, (Heron Press, Sofia, 2005),pp.11-14.
(poster at the 6^th Workshop on Nanoscience and Nanotechnology 24-27.11. 2004, Sofia)

· A. Andreeva, M. Baleva, M. Mladenova, J. Banzarov, V. Donchev, D. Tonova, L. Ivanova.
”Laboratory practicum of optics” Ed. A. Andreeva (Sofia University Press, Sofia, 2005) (in Bulgarian)

2004

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· M. Saraydarov, V. Donchev, K. Germanova, X. L. Wang, S. J. Kim, M. Ogura
”Characterization of GaAs/AlGaAs quantum wires by means of longitudinal photoconductivity”
J.Appl. Phys. 95 (1), 64-68 (2004).

· E. S. Moskalenko, K. F. Karlsson, V. Donchev, P. O. Holtz, B. Monemar, W. V. Schoenfeld, P.M.Petroff
”The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots”
Appl. Phys. Lett. 84 (24) 4896-4898 (2004).

· E. S. Moskalenko, K. F. Karlsson, V. Donchev, P. O. Holtz, B. Monemar, W. V. Schoenfeld, P.M.Petroff
“Effective optical manipulation of the charge state and emission intensity of the InAs/GaAs quantum dots by means of additional infrared illumination”
Appl. Phys. Lett. 85 (5) 754-756 (2004).

· K. Germanova,V. Donchev, N. Shtinkov, S. Vlaev
“Electronic properties of AlAs/GaAs superlattices containing embedded GaAs quantum wells”
Annual of University of Sofia, Faculty of Physics. 97, 59-80 (2004).

· V. Donchev, J. C. Bourgoin, P. Bois
“Dark current in electron irradiated GaAs/AlGaAs multiple quantum wells”
Nucl. Instrum. Methods in Phys. Res. A 517 (1-3), 94-100 (2004).

· V. Donchev, K. F. Karlsson, E. S. Moskalenko, P. O. Holtz, B. Monemar, W. V. Schoenfeld, J. M. Garcia, and P. M. Petroff
“Temperature study of the photoluminescence of a single InAs/GaAs quantum dot”
phys. stat. sol. (c) 1 (3), 608-611 (2004)
(poster at the 8^th Int. Conf. “Optics of excitons in confined systems”, 15-17.09.03, Lecce, Italy)

2003

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· V.Donchev, K.Germanova, M.Saraydarov, K.Dachev
“Kinetics study on the mechanism of zero-biasphotocurrent in semi-insulating bulk GaAs”
Mat. Sci. & Engineering B: Solid State Materials for Advanced Technology 98 (3), 239-243 (2003)

· E.S.Moskalenko, V. Donchev, K.F.Karlsson, P.O.Holtz, B.Monemar, W.V.Schoenfeld, J.M.Garcia and P.M.Petroff
”The effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot”
Phys. Rev. B 68 (15), 155317 (2003)

· M. Saraydarov, V. Donchev, K. Kirilov, K. Germanova
”An alternative approach to electronic structure calculation of crescent-shaped GaAs/AlGaAs quantum wires”
Journal of Materials Science: Materials in Electronics 14, 795-796 (2003)
(poster at the 12^th Int. School on Condensed Mater Phys., 1-6.09.2002, Varna, Bulgaria)

· V. Donchev, M. Saraydarov, K. Germanova, M. Ivanov
“Longitudinal photoconductivity of GaAs/AlGaAs quantum wires”
Journal of Materials Science: Materials in Electronics 14, 793-794 (2003)
(poster at the 12^th Int. School on Condensed Mater Phys., 1-6.09.2002, Varna, Bulgaria)

2002

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· V. Donchev, J. C. Bourgoin, P. Bois
“Dark current through GaAs/AlGaAs multiple quantum wells”
Semicond. Sc. Technol. 17 (6) 621-624 (2002).

· V.Donchev, M. Saraydarov, N. Shtinkov, K. Germanova, S.J. Vlaev
“Diffused GaAs/AlGaAs quantum wells with equidistant electronic states”
Mat. Sci. Engin. C 19 (1-2), 135-138 (2002).
(poster at E-MRS 2001, Symposium S, 5-8.06. 2001, Strasbourg, France)

· H. Samic, G. C. Sun, V. Donchev, N. X. Nghia, M. Gandouzi, M. Zazoui, J. C. Bourgoin, ,H. El-Abbassi, S. Rath, P. J. Sellin
“Characterization of Thick Epitaxial GaAs Layers for X-ray Detection”
Nucl. Instrum. Methods in Phys. Res. A. 487, 107-112 (2002).
(poster at the 3-rd Int. Workshop on Radiation Imaging Detectors, September 2001, Sardinia, Italy)

2001

up

· M. Mazilu, A. Miller, V. T. Donchev
“Modular Method for Calculation of Transmission and Reflection in Multilayered Structures”
Applied Optics 40, 6670-6676 (2001).

· V.Donchev, N.Shtinkov, K.Germanova, I.Ivanov, H.Brachkov, Tzv.Ivanov
“Photoluminescence Line-Shape Analysis in Quantum Wells Embedded in Superlattices”
Mat. Sci. Engin. C 15, (1-2) 75-77 (2001).
(poster presented at E-MRS 2000, Symposium E, 30.05-02.06.2000, Strasbourg, France)

· V. Donchev, K. Germanova, N. Shtinkov, H. Brachkov and I. Ivanov
“Exciton Dominated High-Temperature Photoluminescence in Quantum Wells embedded in Superlattices”
Balkan Phys. Lett. 9, 44-48 (2001).
(poster at the 4^th General conference of BPU, 22-25.08.2000, V.Turnovo, Bulgaria)

· N. Shtinkov, S. Vlaev, V. Donchev
“Interdiffusion-induced direct to indirect transition in AlAs/GaAs superlattices”
Balkan Phys. Lett. 9, 101-105 (2001).
(poster at the 4^th General conference of BPU, 22-25.08.2000, V.Turnovo, Bulgaria)

· M. Marvakov, V.Donchev, I. Haltakov, V. Dimitrov, V. Golev, V. Ivanov, I.Mircheva
“Physics and Astronomics for the 10^th grade (“K.K. Trud”, “I.L. Prozoretz” and “Prosveta”, Sofia, 2001) (in Bulgarian)

2000

up

· N.Shtinkov, V.Donchev, K.Germanova, H.Kolev
“Electronic Structure of Quantum Wells Embedded in Short-Period Superlattices with Graded Interfaces”
Semicond. Sci. Technol. 15, 946-949 (2000)

· N. Shtinkov, S.J. Vlaev, V. Donchev
“G-X Coupling in Diffused AlAs/GaAs Superlattices”
phys. stat. sol. (b) 221 (2), R9-R10 (2000).

· V. Donchev, K.Germanova, N.Shtinkov, I.Ivanov, S.Vlaev
“Photoluminescence Study of AlAs/GaAs Superlattices Containing Enlarged Wells”
Thin Solid Films 364, 224-227 (2000)
(poster presented at E-MRS 1999, Symposium P, 1-4 June, 1999, Strasburg, France)

· N.Shtinkov, S.Vlaev, V.Donchev, K.Germanova
“Electronic States of a Superlattice with an Enlarged Quantum Well: A Tight-Binding Approach”
Physica Status Solidi (b) 220 (1) 153-157 (2000)
(paper presented at the Latin American Symposium on Solid State Physics, 1-6.11.1999, Cartagena de Indias, Colombia)

· V.Donchev, Tzv. Ivanov, I.Ivanov, M.Angelov, K.Germanova
“High Temperature Excitons in GaAs Quantum Wells Embedded in AlAs/GaAs Superlattices
Vacuum 58, 478-484 (2000)
(poster presented at VEIT-99, September, 1999, Varna, Bulgaria)

· N.Shtinkov, V.Donchev, K.Germanova, S.Vlaev, I.Ivanov
“Effect of non-abrupt interfaces in AlAs/GaAs Superlattices with Embedded GaAs Quantum Wells”
Vacuum 58, 561-567 (2000)
(paper presented at VEIT-99, September, 1999, Varna, Bulgaria)

· J.C. Bourgoin, J.-Ph. Montagne, V. Donchev
“X-ray Detectors for Medical Imaging”
Bulg. J. Phys. 27 (1), 65-70 (2000)
(invited lecture at the 4^th General conference of BPU, 22-25.08.2000, V.Turnovo, Bulgaria)

· V. Donchev , M. Saraydarov, N. Shtinkov, S. Vlaev
“Equidistant electronic states in diffused AlGaAs/GaAs quantum wells”
Bulg. J. Phys. 27 Supplement 2, 13-16 (2000)
(poster at the 4^th General conference of BPU, 22-25.08.2000, V.Turnovo, Bulgaria)

Before 2000

up

· V.Donchev, K.Nanev, Chr.Tenchov
“On the interpretation of the titanium line in the appearance potential spectroscopy"
Vacuum 36, 655-657 (1986).

· K.Germanova, V.Donchev, Ch.Hardalov, L.Nikolov
"EL2 in photoconductivity spectra of Cr-doped SI GaAs bulk crystals"
J.Phys.D: Appl.Phys. 20, 1507 (1987).

· K.Germanova, V.Donchev, L.Nikolov
"Analysis of surface conductance in semiinsulating gallium arsenide containing deep levels in the bulk"
Bulg.J.Phys. 15, 575 (1988).

· K.Nanev, V.Donchev
"On the shape of the Ti L₃ -line"
Comptes rendus de l'Académie bulgare des Sciences 42, 43 (1989)

· K.Germanova, V.Donchev, V.Valchev, Ch.Hardalov
"Characterisation of medium-doped n-type GaAs by Hall measurements"
Phys.Status Solidi (a) 113, K231 (1989).

· K.Germanova, V.Donchev, V.Valchev, Ch.Hardalov, I.Yanchev
"On the maximum in Hall coefficient temperature dependence in medium-doped n-GaAs"
Appl.Phys.A 50, 369 (1990).

· V.Donchev, K.Germanova
"Macroscopic Topographic Investigations of Near-Infrared Optical Absorption and Photoconductivity
in Cromium Doped Semi-insulating GaAs wafers"
Bulg.J.Phys. 18, No 1, 29 (1991).

· M.Zazoui, V.Donchev, J.C.Bourgoin
"Electron emission from defects in multiband semiconductors"
Phys.Rev.B. 47, 4296 (1993)

· S.L.Feng, J.Krynicki, V.Donchev, J.C.Bourgoin, M.Di Forte-Poisson, C.Brylinski, S.Delage, H.Blank, S.Alaya.
"Band Offset of GaAs-GaInP Heterojunctions"
Semicond. Sci. Technol. 8, 2092 (1993)

· H.Chaabane, M.Zazoui, J.C.Bourgoin, V.Donchev.
"Electronic Transport through Semiconductor Barriers"
Semicond. Sci. Technol. 8, 2077 (1993)

· K.Germanova, V.Donchev, I. Ivanov, N.Zheleva, Ch. Hardalov
"Spectral Behaviour of Zero-bias Potocurrent at Low-Temperature in Bulk Semi-Insulating GaAs."
J.Electrochem.Soc.141 (9), 2533 (1994)

· V.Donchev, K.Germanova
"Time evolution of Zero-Bias photocurrent in semiinsulating GaAs:Cr"
J.Material Science Letters 15 (23), 2075 (1996)

· V.Donchev, N.Shtinkov, K.Germanova,
"Effect of random defect density fluctuations on the Fermi level in highly compensated
semiconductors"
Mat. Sci. & Engineering B: Solid State Materials for Advanced Technology 47, 131 (1997)

· M.Mazilu, V. Donchev, A.Miller, O.Blum
“Optical determination of interface roughness in multilayered semiconductor structures”
Appl.Phys.B 68, 633-636 (1999)
(poster presented at Int. Conf. Nonlinear Optics at Interfaces, 21-24.09.1998, Berlin, Germany)

· V.Donchev
"Calculation of Lame parameters using the system for analytical transformations REDUCE-2"
Proc. Int.Conf. "Automation of Scientific Research", X 1984, Plovdiv, Bulgaria, vol.2, p.315 (in Russian)

· K.Germanova, V.Donchev, Ch.Hardalov, L.Nikolov.
"Deep Level Investigations in Semi-Insulating GaAs:Cr by means of Photoconductivity Measurements"
Proc. National Young School with Int. Participation "New Materials and Technologies" 28.09 - 3.10.1986,
Primorsko, Bulgaria, p.135 (in Bulgarian).

· K.Germanova, V.Donchev
"Topographic Investigations of Sheet Resistance in Semiconductor Wafers by Means of the Dark Spot Method"
Proc. National Young School with Int. Participation "New Materials and Technologies", 3-8.09.
1988, Varna, Bulgaria, p.189 (in Bulgarian).

· K.Germanova, V.Donchev, Ch.Hardalov
"On the dynamic photo-response of the main deep levels in semiinsulating GaAs:Cr".
Proc. of the XXVI Colloquium Spectroscopicum Internationale, July 2-9 1989, Sofia, Bulgaria,
vol.8, p.267.

· K.Germanova, V.Donchev
"On the assessment of optical ionisation energy of Cr center in GaAs".
Procs. Extended Abstracts of II Intern. Symposium on Surface Waves in Solid and Layered Structures
and IV National Sci. Techn. Conference with International Participation "Acoustoelectronics - 89",
14-19.09.1989, Varna, Bulgaria, vol.2, p.476.

· K.Germanova, V.Donchev, I.Ivanov, Ch.Hardalov
"EL2 intracenter transition in photoconductivity spectra of semi-insulating GaAs:Cr".
Proc. of the Intern. Conf. on Optical Characterisation of Semiconductors - August 2-4, 1990, Sofia,
Bulgaria (Satellite Conf. of the 20th Intern. Conf. on the Physics of Semiconductors, Thessaloniki,
Greece, August 6-10, 1990), ed. D.B.Kushev (Trans. Tech. Publications, Switzerland,1992) p.63.

· I.Ivanov, V.Donchev, L.Nikolov
"Investigation of band- to-band and deep level luminescence in GaAs:Sn"
Proc. of the First General Conference of the Balkan Physical Union, September 26-28, 1991,
Thessaloniki, Greece., vol.II, p.953

· V.Donchev, K.Germanova
"Dynamics of Zero-Bias Photocurrent in Semi-Insulating GaAs:Cr"
Proc. Supplements Balkan Phys. Lett. vol.2 (1994), Part I, p.572
(Second General Conference of the Balkan Physical Union, September 12-14, 1994, Izmir, Turkey)

· V.Donchev, I.Ivanov, K.Germanova
"Optical and theoretical assessment of GaAs quantum wells having superlattices as barrier layers"
in Devices based on Low-Dimensional Semiconductor Structures, (ed. M.Balkanski), NATO ASI
Series, Kluwer Academic Publishers, Dordrecht, 1996, p.175

· V.Donchev, I.Ivanov, K.Germanova
"Optical and theoretical study of GaAs quantum wells embedded in GaAs/AlAs superlattices"
in "Heterostructure Epitaxy and Devices" , eds J.Novak and. A.Schlachetzki, NATO ASI Series, 3.
High Technology - vol. 11, (Kluwer Academic Publishers, Dordrecht, 1996), p.83

· V.Donchev, Tzv.Ivanov, K.Germanova
"Electronic structure of AlAs/GaAs superlattices with an emedded centered GaAs quantum well"
in "Advanced Electronic Technologies and Systems Based on Low-Dimensional quantum Devices", ed. M.Balkanski, NATO ASI Series, 3,. High Technol.-vol.42 (Kluwer Acad.Publish., Dordrecht,1998) p.51

· S.Vlaev, A.Miteva, V.Donchev
"Electronic states in graded composition quantum wells under a constant electric field"
in "Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices", ed. M.Balkanski, NATO ASI Series, 3,. High Technol.-vol.42 (Kluwer Acad.Publish., Dordrecht,1997) p.55

· V.Donchev, K .Germanova
"Electronic States of GaAs /AlAs Quantum Wells with Superlattice Barriers"
Proc. Suplements Balkan Phys. Lett. vol. 5 (1997), p.410
(3rd General Conference of the Balkan Physical Union, 2-5 September, 1997, Cluj-Napocca, Romania)

· V.Donchev, I. Ivanov, K .Germanova
"AlAs/GaAs Superlattices Containing Enlarged GaAs Quantum Wells"
in: “Semiconductor Physics and Technology ‘17 “ (ed. D.B.Kushev) Heron Press Sci. Series B, Sofia, 1998, p.100. (Proc. 17th Bulgarian-Greek Symposium on Semicond. and Solid State Phys,. June 1997, Sofia, Bulgaria)

· V. Donchev, M. Mazilu, A.Miller
“A simple technique for real time spectral corrections and noise reduction”
extended abstracts, 11^th LEOS’98 Annual Meeting , 1-4 December 1998, Orlando, Florida, USA, (IEEE, Inc., Piscataway, 1998) vol.2 pp. 128-129.

· N.Shtinkov, V. Donchev, K.Germanova.
“Effect of the width of an enlarged quantum well in AlAs/GaAs superlattices on the electronic structure”
Proc. of ISCMP "Thin Films Materials and Devices - Development in Science and Technology", Varna, Sept.'98, eds. J.M.Marshal, N.Kirov and A.Vavrek (World Scientific, Singapore, 1999) pp. 305-309.